<p><img class='wp-post-image' style='float:left;margin-right:10px;' src="https://regmedia.co.uk/2017/02/28/uber_london.jpg" width="531px" alt="sci tech"/></p> <p>To additional enhance the light extraction, the exposed N-face AlN was anisotropically etched in dilute KOH. The LEE of the AlGaN LED improved by ∼three× after KOH roughening at room temperature.</p> <p>The high SF6 etch selectivity between SiC and AlN was essential for removing...